The principle of plasma glue removal machine

& Plasma glue removal machine, the glue removal gas is oxygen. Its working principle is to place the silicon wafer in a vacuum reaction system, introduce a small amount of oxygen, increase the pressure, and generate a high-frequency signal from a high-frequency signal generator to form a strong electromagnetic field in the quartz tube, which ionizes the oxygen to form oxygen ions and activates it. A glow column of plasma consisting of a mixture of oxygen atoms, oxygen molecules and electrons. Activated oxygen (active atomic oxygen) can quickly oxidize the polyimide film into volatile gases, which are pumped away by a mechanical pump, thereby removing the polyimide film from the silicon wafer. The advantages of the plasma remover are simple removal operation, high removal efficiency, clean and smooth surface, no scratches, low cost, and environmental protection
Dielectric plasma etching equipment generally uses capacitively coupled plasma parallel plate reactors. In the parallel electrode reactor, the reactive ion etching chamber adopts an asymmetric design with a small cathode area and a large anode area. The object to be etched is placed on the smaller electrode. Under the action of the thermal motion generated by the radio frequency power supply, the negatively charged free electrons reach the cathode quickly due to their small mass and fast movement speed, while the positive ions cannot reach the cathode in the same time due to their large mass and slow speed, causing the cathode to close to the cathode. A negatively charged sheath is formed. Under the acceleration of the sheath, positive ions vertically bombard the surface of the silicon wafer, accelerating the chemical reaction on the surface and the detachment of the reaction products, resulting in a very high etching rate.