Year1
- 测量温度：
- 室温-600℃
- 控温精度：
- ±1°C
- 测温精度：
- ±0.1°C
Measurement range: Resistivity of silicon germanium single crystal ingot wafer, measurement of sheet resistance of silicon epitaxial layer diffusion layer and ion implantation layer, and measurement of sheet resistance of conductive glass and other conductive films.
Block resistance allows measurement conditions such as high temperature, vacuum atmosphere and other conditions.
Measurements can be made under normal temperature, variable temperature and constant temperature conditions.
Enabling analysis software design, input the sample area and thickness to automatically calculate the resistivity of the sample.
Analyze the change curve between resistivity and temperature, and can be matched with or digital multimeter.
Technical Specifications
Temperature Range Room Temperature
Typical Value of Temperature Rise Slope
Display Accuracy
Temperature Control Accuracy
Resistance
Resistivity
Block Resistance
Measurable semiconductor material size, film diameter
Probe spacing
Probe pressure is adjustable, the maximum pressure is about
Insulation material between pins, ceramic or ruby
Insulation between pins Resistance
Probe material tungsten carbide
Data transmission interface
Temperature test
During the design and finalization of electronic products, in order to prevent the surface temperature from being too high to harm the user or the temperature exceeding the limit of the material. To avoid the risk of fire, insulation failure and electric shock caused by the withstand limit value, the temperature of each part of the equipment needs to be tested under normal operating conditions and simulated fault conditions. Currently, thermocouple measurement or additional infrared temperature measurement monitoring is generally used.
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